Abstract
Striking effects of dopant atoms on the formation of Ni silicides were observed. Epitaxial NiSi 2 was found to grow on both BF + 2 - and B + -implanted (001) and (111)Si at 250-280°C. The formation of Ni 2 Si was suppressed. It is conjectured that the presence of dopant atoms may lower the activation energy substantially to promote the formation of epitaxial NiSi 2 at low temperatures. The effects may be exploited to grow other epitaxial silicides on silicon at low temperatures.