摘要
Nonpolar ZnO films were grown epitaxially on (10̄10) sapphire substrates at 200 C by atomic layer deposition with interrupted flow. The latter method improved the crystalline quality of ZnO films, transformed the structure from polycrystalline to epitaxial, and enhanced the optical properties of near-band-edge emission. The interfacial structure shows multiple domain phases along sapphire (020) and the disappearance of a minor phase near the surface. As determined by X-ray diffraction, the epitaxial relation between ZnO and sapphire follows [002] ZnO ||[020] sapphire and [020] ZnO ||[006] sapphire . The photoluminescence intensity increased with increasing crystalline quality and thickness of ZnO films. © 2010 American Chemical Society.