Abstract
We report here details of the epitaxial lateral overgrowth (ELOG) process for embedding a Ta 2 O 5 /SiO 2 multilayer high reflector micro-mirror array (MMA) in the GaN. The process was aiming for purpose of applying the MMA on the micro-light emitting diode (micro-LED) for light extraction enhancement of the micro-LED. A two-step ELOG process with different temperature and pressure to achieve high lateral growth rate and low vertical growth rate was implemented and the two-step ELOG process was followed by a slow growth rate process to complete embedding the MMA. © 2011 The Japan Society of Applied Physics.