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Equivalent circuit model in grain-boundary barrier layer capacitors
Journal article   Peer reviewed

Equivalent circuit model in grain-boundary barrier layer capacitors

Bi-Shiou Chiou, Sin-Tan Lin, Jenq-Gong Dun and Peng-Heng Chang
Journal of the American Ceramic Society, Vol.72(10), pp.1967-1975
10/1989

Abstract

Barium titanate Capacitors Electrical properties Grain boundaries Models
Electrical properties of BaTiO 3 -based capacitors are investigated. A new model is developed to explain the frequency response of the impedance of grain-boundary barrier layer (GBBL) capacitors. This model takes into consideration the dipole polarization effect and provides a simple and effective approach to evaluate the performance of GBBL capacitors with various dopants and sintering in different atmospheres. When sintered in a reducing atmosphere, doped BaTiO 3 exhibits a higher dielectric constant and a relatively stable dielectric constant with respect to the frequency response and temperature dependence. Also, smaller grain resistivity is obtained with addition of both Dy 2 O 3 and Nb 2 O 5 .

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