Erratum: Correction to ZnO/NiO Diode-Based Charge Trapping Layer for Flash Memory Featuring Low Voltage Operation (ACS Appl. Mater. Interfaces (2015) 7 (6383-6390) (DOI: 10.1021/am507535c)))

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Chergn-En Sun, Chin-Yu Chen, Ka-Lip Chu, Yung-Shao Shen, Chia-Chun Lin 和 Yung-Hsien Wu

ACS Applied Materials and Interfaces, 卷.7(18), 頁.10067

05/2015

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Materials Science (all)

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題名: Erratum: Correction to ZnO/NiO Diode-Based Charge Trapping Layer for Flash Memory Featuring Low Voltage Operation (ACS Appl. Mater. Interfaces (2015) 7 (6383-6390) (DOI: 10.1021/am507535c)))
翻譯題名: Erratum: Correction to ZnO/NiO Diode-Based Charge Trapping Layer for Flash Memory Featuring Low Voltage Operation (ACS Appl. Mater. Interfaces (2015) 7 (6383-6390) (DOI: 10.1021/am507535c)))
創作者：: Chergn-En Sun (作者)
Chin-Yu Chen (作者)
Ka-Lip Chu (作者)
Yung-Shao Shen (作者)
Chia-Chun Lin (作者)
Yung-Hsien Wu (作者)
學術資源類型: 期刊文章
出版日期: 05/2015
出版資訊: ACS Applied Materials and Interfaces, 卷.7(18), 頁.10067
語言: 英語