- 題名
- Erratum: Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (Applied Physics Letters (2009) 95 (082110))
- 翻譯題名
- Erratum: Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (Applied Physics Letters (2009) 95 (082110))
- 創作者：
- C.Y. Chang (作者) - University of FloridaYu-Lin Wang (作者) - University of FloridaB.P. Gila (作者) - University of FloridaA.P. Gerger (作者) - University of FloridaS.J. Pearton (作者) - University of FloridaC.F. Lo (作者) - University of FloridaF. Ren (作者) - University of FloridaQ. Sun (作者) - Yale UniversityYu Zhang (作者) - Yale UniversityJ. Han (作者) - Yale University
- 學術資源類型
- 期刊文章
- 出版日期
- 2009
- 出版資訊
- Applied Physics Letters, 卷.95(13), 139901
- 語言
- 英語
期刊文章
Erratum: Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (Applied Physics Letters (2009) 95 (082110))
Applied Physics Letters, 卷.95(13), 139901
2009
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