Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow-pressure chemical vapor deposition ((Applied Physics Letters (1988) 52 (1797))

Journal article

Peer reviewed

Tri-Rung Yew, Kenneth O and Rafael Reif

Applied Physics Letters, Vol.52(24), pp.2061-2063

1988

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Title: Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow-pressure chemical vapor deposition ((Applied Physics Letters (1988) 52 (1797))
Creators - without role: Tri-Rung Yew - Massachusetts Institute of Technology
Kenneth O - Massachusetts Institute of Technology
Rafael Reif - Massachusetts Institute of Technology
Publication Details: Applied Physics Letters, Vol.52(24), pp.2061-2063
Identifiers: 9957775763806774
Academic Unit: National Tsing Hua University
Language: English
Resource Type: Journal article