Erratum: Valley-based field-effect transistors in graphene (Physical Review B - Condensed Matter and Materials Physics)

Journal article

Open access

Peer reviewed

N.-Y. Lue, Y.-C. Chen and G.Y. Wu

Physical Review B - Condensed Matter and Materials Physics, Vol.87(3), 039904

09/01/2013

Abstract

[無可用摘要]

url

https://doi.org/10.1103/PhysRevB.87.039904View

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Title: Erratum: Valley-based field-effect transistors in graphene (Physical Review B - Condensed Matter and Materials Physics)
Creators - without role: N.-Y. Lue
Y.-C. Chen
G.Y. Wu
Publication Details: Physical Review B - Condensed Matter and Materials Physics, Vol.87(3), 039904
Identifiers: 9957768194306774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Journal article