摘要
The evolution of vacancy ordering structures in epitaxial YbSi 2-x thin films on (111) and (001)Si was studied by using transmission electron microscopy (TEM). Epitaxial YbSi 2-x thin films were grown on Si by either room temperature deposition with subsequent thermal annealing or deposition at elevated temperature. It was found that the vacancy ordering structures strongly influenced the physical properties of epitaxial rare-earth silicide nanowires grown on (001)Si.