Abstract
Epitaxial (0 0 1) NiMn/NiFe (NiMn at bottom) films were grown on Cu buffer layer by using e-beam evaporation at room temperature. After annealing at 275 °C, NiMn layers became an ordered phase, and showed an exchange field of 78 Oe for 15 nm NiFe. During annealing, Cu diffused into NiMn, and hence affected the exchange field.