Experimental evidence of suppression on oxygen vacancy formation in Hf based high-k gate dielectrics with La incorporation

Journal article

Peer reviewed

Chun-Chang Lu, Kuei-Shu Chang-Liao, Yu-Fen Cheng and Tien-Ko Wang

Microelectronic Engineering Microelectronic Engineering

2009

Abstract

suppression;oxygen vacancy formation;Hf based;high-k gate dielectrics;La incorporation

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Title: Experimental evidence of suppression on oxygen vacancy formation in Hf based high-k gate dielectrics with La incorporation
Creators - without role: Chun-Chang Lu
Kuei-Shu Chang-Liao - 國立清華大學原子科學院工程與系統科學系
Yu-Fen Cheng
Tien-Ko Wang
Publication Details: Microelectronic Engineering Microelectronic Engineering
Identifiers: 9957767870906774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Journal article