Abstract
Experimental evidence of suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporation is provided by using modified charge-pumping (CP) techniques. The original distribution of interface traps and bulk traps of pure HfO 2 and HfO 2 /LaOx dielectric stack are extracted and compared by CP techniques. It is found that devices with HfO 2 /LaOx dielectric stack have higher interface trap but lower bulk trap density than those with pure HfO 2 . Especially, device with HfO 2 /LaOx dielectric stack is highly resistant to constant voltage stress, which can be attributed to the suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporation. © 2009 Elsevier B.V. All rights reserved.