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Exploring topological defects in epitaxial BiFeO3 thin films
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Exploring topological defects in epitaxial BiFeO3 thin films

Rama K. Vasudevan, Yi-Chun Chen, Hsiang-Hua Tai, Nina Balke, Pingping Wu, Saswata Bhattacharya, L.Q. Chen, Ying-Hao Chu, I-Nan Lin, Sergei V. Kalinin, …
ACS Nano, 卷.5(2), 頁碼.879-887
02/2011

摘要

BiFeO3 closure-domain multiferroic PFM thin-film topological defects Materials Science (all) Engineering (all) Physics and Astronomy (all)
Using a combination of piezoresponse force microscopy (PFM) and phase-field modeling, we demonstrate ubiquitous formation of center-type and possible ferroelectric closure domain arrangements during polarization switching near the ferroelastic domain walls in (100) oriented rhombohedral BiFeO 3 . The formation of these topological defects is determined from the vertical and lateral PFM data and confirmed from the reversible changes in surface topography. These observations provide insight into the mechanisms of tip-induced ferroelastic domain control and suggest that formation of topological defect states under the action of local defect- and tip-induced fields is much more common than previously believed. © 2011 American Chemical Society.

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