Logo image
Extended α-phase Bi atomic layer on Si(1 1 1) fabricated by thermal desorption
期刊文章   開放取用(OA)   同儕審查

Extended α-phase Bi atomic layer on Si(1 1 1) fabricated by thermal desorption

Shin-Ching Hsieh, Chia-Hsiu Hsu, Han-De Chen, Deng-Sung Lin, Feng-Chuan ChuangPin-Jui Hsu
Applied Surface Science, 144103
2019

摘要

Bismuth Density functional theory R30° surface alloy Rashba effect Scanning tunneling microscopy Silicon Chemistry (all) Condensed Matter Physics Physics and Astronomy (all) Surfaces and Interfaces Surfaces Coatings and Films
Two-dimensional materials with sizable spin-orbit coupling are not only interesting to fundamental studies, but also useful candidates for technological applications. Here, we report on the fabrication of extended α-phase Bi atomic layer on Si(1 1 1) surface by means of thermal desorption. The atomic and electronic structures have been investigated by combining scanning tunneling microscopy (STM) experiments with density functional theory (DFT) calculations. While β-phase Bi trimer with 3×3 R30° surface reconstruction can be prepared by room-temperature deposition with subsequent post annealing at 700 K, the α-phase Bi monomer only appears at 800 K due to thermal desorption with the Bi desorption rate of 0.26 ML/min. From our DFT calculations, the α-phase Bi shows Rashba energies E = 15 meV and 3 meV at high symmetry points of M¯ and K¯, respectively. Since α-phase Bi monomer represents isotropic lattice symmetry with a dilute Bi density, it may serve as a potential template to tune Rashba effect by incorporating with multiple elements.

檔案與連結 (1)

url
https://doi.org/10.1016/j.apsusc.2019.144103檢視
已出版(紀錄版本) 開放

相關連結

指標

1 檢視次數

詳細資料

Logo image