Abstract
Extended x-ray absorption fine structure (EXAFS) has been used to measure the bond length in a 23 Å epitaxial Gd 2 O 3 film grown on GaAs(001). The Gd-O bond length is determined to be 2.390 ±0.013 Å, which corresponds to a +0.063±0.013 Å increase or a +2.7%±0.6% bond-length strain relative to the bond length in a bulk Gd 2 O 3 powder. Using a simple model for the strained film that matches the [001] and [-110] axes of Gd 2 O 3 with the [110] and [1-10] axes of the GaAs(001) surface, the measured bond-length increase of the film determined by EXAFS agrees well with the perpendicular lattice distortion of the film determined by diffraction. © 2000 American Institute of Physics.