Abstract
The fabrication and characterization of 650 nm AlGaInP resonant-cavity light-emitting diodes (RCLEDs) was studied. For the experiment, the AlGaInP epitaxial structures were grown on Si-doped n-type GaAs substrates. Photolithography, metallization, and bonding techniques were used to fabricate the devices with surface emitting geometry. All the devices were found to exhibit a low operating voltage ranging from 1.9 to 2.0 v at 20 mA which was attributed to carbon doping. The RCLED with a window diameter of 120 μm exhibited the maximum light output power of 0.79mw at 39 mA.