Abstract
In this article, we describe the fabrication and characterization of high-performance planar InGaAs/InP separate absorption, grading and multiplication avalanche photodetectors with double-diffused guard rings. The fabricated devices exhibit a breakdown voltage V B of -79-80 V, an extremely low dark current of 11.2 nA and a capacitance of 0.8 pF at 0.9V B , a maximum bandwidth of 2 GHz at the multiplication gain of 3, and a rise time of 126.4 ps and a pulsewidth of 206.8 ps for response speed. © 1999 Elsevier Science Ltd. All rights reserved.