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Fabrication of Very High Resistivity Si with Low Loss and Cross Talk
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Fabrication of Very High Resistivity Si with Low Loss and Cross Talk

Y.H. Wu, Albert Chin, K.H. Shih, C.C. Wu, C.P. Liao, S.C. Pai 和 C.C. Chi
IEEE Electron Device Letters, 卷.21(9), 頁碼.442-444
2000
DOI: https://doi.org/10.1109/55.863105

摘要

Cross talk high resistivity Si RF loss Electronic Optical and Magnetic Materials Electrical and Electronic Engineering
We have used proton and As + implantation to increase the resistivity of conventional Si (10 Ω-cm) and Si-on-quartz substrates, respectively. High resistivity of 1.6 Ω-cm is measured that is close to intrinsic Si and semi-insulating GaAs. Very low loss and cross coupling of 6.3 dB/cm and —79 dB/cm (10 μm gap) at 20 GHz are measured on these samples, respectively. The very high resistivity and improved rf performance are due to the extremely fast ~1 ps carrier lifetime stable even after a 400 °C annealing for 1 h. Little negative effect on gate oxide integrity is also observed as evidenced by the comparable stress-induced leakage current and charge-to-breakdown for 30 A oxides. © 2000, The Institute of Electrical and Electronics Engineers, Inc.

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