Abstract
The fabrication of high-brightness n-zinc oxide (ZnO) nanowires (NW)/p-gallium nitride (GaN) film hybrid heterojunction light emitting diodes (LED) devices by directly growing n-type ZnO nanowires arrays on p-GaN wafers was reported. The hybrid (n-ZnO NWs)/(p-GaN film) LED device was fabricated by growing a ZnO nanowire array on a GaN film, with sapphire as the substrate and using the physical vapor-deposition process. The results show that ZnO NWs are 100-150 nm in diameter with a sharp tip, lengths of 5 μm, and from fairly uniform arrays on the substrate. The EL spectrum of the (n-ZnO NWs)/(p-GaNfilm) LED device show that an increase of forward bias from 10 to 35 V enhances the emission peak, while the main emission peak shift from 440 to 400 nm when the forward bias is increased. The relative intensity of ZnO emission increases with the increase of applied voltage, leading to a continuous shift of the emission peak towards high energies.