Abstract
A convenient method for the fabrication of metal nanowires by a combination of atomic force microscopy nanoscratching on a single-layer resist and lift-off process is reported. Various metal nanowires, including Au, Cu, Ni, Al, and Ti, with widths as small as 50 nm are successfully created. The electrical resistivities of the nanowires have also been obtained and found to be in good agreement with reported results. © 2005 IOP Publishing Ltd.