摘要
An intrinsic {0001} GaN wafer cut to expose the {1010}/{1100} side faces allows examination of its conductivity properties with respect to the crystal faces. Interestingly, the {1010} face shows a 10-fold higher photoluminescence peak intensity than the {0001} face. The {0001} face is 60-fold more conductive at 6 V than the {1010} face, demonstrating the presence of an electrical facet effect. The conductivity difference can be rationalized assuming different degrees of band bending at these crystal surfaces. Asymmetric I-V curves were obtained with electrical connections made to both faces simultaneously, showing the potential of using this behavior to fabricate transistors.