摘要
Recently, waste silicon extracted from photovoltaic industry is an eco-friendly and recycling source for anode materials. In this study, one-pot synthesis of boron-doped graphene silicon (BG-3) is synthesized by graphene, boron acid and silicon via high energy ball milling and calcination. Furthermore, various strategies including doping elements and compositing with buffer matrix have been explored to not only overcome the poor electrical conductivity but also prevent pulverization during cycling. Boron-doped graphene silicon (BG-3) shows enhanced stability (70% retention after 80 cycles at 500 mA g −1 ) because of doping effect and carbon matrix. Moreover, boron doped graphene silicon/graphite composite (BG-3@G) demonstrates a high capacity of 850mAh g −1 and favorable cycle retention of 76.5% after 180 cycles at 225 mA g −1 . This electrochemical performance result indicates that boron-doped in silicon and graphene is an effective solution for enhancing the cycle life time.