摘要
Inserting an ultrathin TiN interlayer into a ferroelectric HfZrOx (HZO) film of 10 nm by in situ ALD was proposed to implement ferroelectric capacitors (FeCAPs) in this work. The FeCAPs with the structure of TiN/HZO/TiN/HZO/TiN show a high remanent polarization (2P r ) of 32.6 μC/cm 2 at a low operating voltage of 2 V and a pulse width of 5 μs. Compared to those without TiN interlayer, this work shows P r enhancement by 2.2× under partial-switching conditions (2 V/5 μs) and 50% reduction of operating voltage to achieve comparable P r under full-switching. This work also demonstrates the triple-level cell (TLC, 3 bits/cell) storage capability and can achieve robust endurance up to 3 × 10 7 cycles under partial-switching endurance conditions (±2 V/5 μs) when combined with the recovery method. The promising properties are mainly attributed to the high ratio of the orthorhombic phase of the HZO film. These results attest to the eligibility of the TiN interlayer to implement low-power, high-reliability, and high-density FeCAPs for embedded memory applications.