摘要
Beneficial effect of nano-sized PZT powder incorporation on modifying the characteristics of Pb(Zr 0.52 Ti 0.48 )O 3 , PZT films was demonstrated. The amorphous phase derived from metallo-organic- decomposition (MOD) process started to crystallize at a post-annealing temperature as low as 500°C and can withstand 650°C post-annealing temperature process without inducing the PbO-loss phenomenon. However, 500°C post-annealed PZT films still exhibit paraelectric properties, which can be ascribed to the co-existence of large proportion of amorphous phase, surrounding the crystalline phase. It needs at least 650°C post-annealing process to fully developed the pervoskite structure for PZT films. The remnant polarization (Pr) of the PZT films increases with the proportion of crystalline phase, achieving Pr = 24.9 μC/cm 2 for 650°C annealed films, with coercive field (Hc) around Ec = 373 kV/cm.