摘要
Although various synthesis methods have been explored to produce large-scale hexagonal boron nitride (hBN) single crystals, the thermokinetics of hBN growth by atmospheric pressure chemical vapor deposition (APCVD) with respect to the gas phase has yet to be firmly established. Here, the thermokinetic manifestations of hBN involve not only the competitive adsorption between H-2 and hBN constituents toward B and N elements on Cu(111) but also the changes in Gibbs free energy based on the excessive introduction of H-2. Additionally, the growth kinetics of hBN have been well studied and implemented, with the epitaxial growth of hBN on Cu(111) resulting from step-edge-governed nucleation and growth, which is influenced by the step-terrace structures of Cu(111) and the temperature-dependent deposition rate of hBN. The correlations between the dielectric properties and thermokinetics of hBN APCVD-growth have been studied for the very first time to shed light on the electrical properties of hBN. The high crystallinity of hBN that is thermodynamically favored in the APCVD system is conducive to possessing the hard-breakdown (HBD) event in multilayer hBN films and the enhanced mobility in molybdenum disulfide (MoS2) field effect transistor (FET) devices integrated with monolayer hBN films used as interfacial dielectric layers.