摘要
In this article, heterogeneous complementary field-effect-transistor (CFET) constructed by vertically stacking amorphous indium gallium zinc oxide (a-IGZO) n-channel on poly-Si p-channel with their own dielectric layer and work function metal gate inverters were demonstrated. Meanwhile, high-frequency IGZO radio frequency (RF) devices with poly-Si as guard ring material simultaneously were fabricated in the same process. High fT and fmax IGZO Radio Frequency Integrated Circuits (RFICs) with the excellent on-off ratio need to be promoted by introducing fluorine-based gas. For the IGZO device in CFET, its threshold voltage can be tuned by the adjusted gate for ideal inverter operation at different supply voltage (VDD). Moreover, the swing of the IGZO transistor and the gain extracted from voltage transfer characteristic (VTC) curves can also be improved when the controlled gate and adjusted gate are connected as an input terminal, but the VTH tunability for the inverter is satisfied in the meantime. We also simulated 6T-SRAM circuit by SPICE model to further investigate the potential of an adjusted gate for optimizing the noise margin during SRAM operation.