Formation of Gd oxide thin films on (111)Si

J.C. Chen; G.H. Shen; L.J. Chen

doi:10.1016/S0169-4332(98)00663-1

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Formation of Gd oxide thin films on (111)Si

Journal article

Peer reviewed

Formation of Gd oxide thin films on (111)Si

J.C. Chen, G.H. Shen and L.J. Chen

Applied Surface Science, Vol.142(1), pp.120-123

04/1999

DOI: https://doi.org/10.1016/S0169-4332(98)00663-1

Abstract

Formation of Gd oxide thin films on (111)Si has been investigated. A complicated multilayered structure was formed in Gd thin films on (111)Si annealed in O ₂ ambient. On the other hand, a uniform oxide layer was formed in GdSi _2-x films on (111)Si oxidized in O ₂ ambient. Oxidation mechanisms are discussed.

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Title: Formation of Gd oxide thin films on (111)Si
Creators - without role: J.C. Chen - National Tsing Hua University
G.H. Shen - National Tsing Hua University
L.J. Chen - National Tsing Hua University
Identifiers: 9957772632906774
Academic Unit: Department of Materials Science and Engineering, College of Engineering, National Tsing Hua University
Language: English
Resource Type: Journal article
Publication Details: Applied Surface Science, Vol.142(1), pp.120-123

Formation of Gd oxide thin films on (111)Si

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