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Formation of Self-Assembled Monolayer on Cleaved Compound Semiconductor Surfaces and Its Nano-structure on AlGaAs/GaAs Heterostructure
Journal article   Open access   Peer reviewed

Formation of Self-Assembled Monolayer on Cleaved Compound Semiconductor Surfaces and Its Nano-structure on AlGaAs/GaAs Heterostructure

H. Ohno, L. A. Nagahara, S. Gwo, W. Mizutani and H. Tokumoto
Journal of the Surface Society of Japan, Vol.18(6), p.373
1997

Abstract

Self-Assembled;Monolayer;Cleaved Compound Semiconductor;Surfaces;Nano-structure;AlGaAs/GaAs Heterostructure
Self-assembled monolayer(SAM)s of 1-octadecanethiol [ODT: CH3(CH2)17SH] were formed on bare GaAs substrates by cleaving the substrates in a 1 mM ethanol. Both growth process and surface properties were investigated using surface force microscopy (SFM) and x-ray photoelectron spectroscopy (XPS). Dendritic shape of islands ∼20 nm in diameter appeared for 30 sec immersion. As the immersion time increased, these islands coalesced, connected each other, and finally the surfaces were uniformly covered with the monolayer after 1 day of immersion. High-resolution friction force microscope (FFM) images revealed a periodic structure that had two type of lines on the SAM. A structural model of the SAM, which successfully explained these experimental results, was presented. XPS results also indicated that SAM of ODT can protect a GaAs surface from oxidation. Furthermore, we demonstrated the formation of nanostructural SAM of ODT by use of A1GaAs/GaAs hetero-epitaxial substrates. SFM images revealed that ODT molecules selectively chemisorbed on GaAs surface regions resulting in the formation of nano-wires, 10 nm in width and ∼1 nm in height. The mechanism of the nanostructural SAM formation was also discussed.
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https://doi.org/10.1380/jsssj.18.373View
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