Abstract
Formation of TiSi 2 on nitrogen ion implanted (001)Si has been investigated. Nitrogen ion implantation was found to suppress the B and As diffusion in silicon. For Ti on 30 keV BF 2 + -20 keV N 2 + and 30 keV As + -20 keV N 2 + implanted samples, a continuous low-resistivity TiSi2 layer was found to form in all samples annealed at 700-900 °C. For Ti on 1 × 10 15 /cm 2 N 2 + - and As + implanted samples, end-of-range defects were completely eliminated in all samples annealed at 700-900 °C. The results indicated that with appropriate control, N + -implantation can be successfully implemented in forming low-resistivity TiSi 2 contacts on shallow junctions in deep submicron devices. © 1999 Materials Research Society.