摘要
The self-aligned formation of CoSi 2 was achieved on the selective epitaxial growth (SEG) silicon layer on (001)Si inside 0.1-0.6 μm oxide openings prepared by electron beam lithography. The uniform, high quality SEG Si layer was grown by ultrahigh vacuum chemical vapor deposition at 560 °C with Si 2 H 6 . Self-aligned CoSi 2 film without lateral growth of suicide was grown on the SEG Si layer by rapid thermal annealing at 700 °C in N 2 ambient. The successful integration of the self-aligned CoSi 2 and SEG of Si processes promises to be a viable process technology for the future deep submicron devices. © 1996 American Institute of Physics.