Abstract
Free-standing single-crystal NiSi 2 nanowires (NWs) were synthesized on Ni foil with a simple vapor transport method. The growth of previously elusive Si-rich silicide NWs was achieved with the addition of NiCl 2 owders in front of the Ni substrate upstream. The presence of NiCl 2 gas enhanced the condensation of Si and suppressed the supply of Ni atoms in the subsequent reactions. As the NWs maintain low resistivity, can carry very high currents, and possess excellent field emission properties, the growth of NiSi 2 NWs shall lead to significant advantages in the fabrication of Si nanodevices. © 2009 American Chemical Society.