摘要
We study the KΒ-SiC (100) c (4×2) surface by atom-resolved scanning tunneling microscopy and spectroscopy, and synchrotron radiation-based photoemission spectroscopy. At intermediate coverages, the K atoms are grouped by pairs around Si dimers at pedestal sites, in a 2×3 long-range ordering leaving 13 of the pedestal sites unoccupied, while keeping the semiconducting c (4×2) surface unchanged as identified by tunneling through the K overlayer. At saturation, additional K atoms adsorb on remaining pedestal sites and act as atomic "contacts" between two K pairs, leading to K atom chain formation in a 2×1 metallic surface. © 2006 American Institute of Physics.