摘要
As the number of transistor increases in modern devices, the resistivity of metal lines increases with the downscaling of the vias dimension due to the increased in surface scattering of electrons. Herein, we evaluated the electrical performance and the adhesion strength of the Ru/SiO 2 substrate upon functionalizing with benzyliminetriethoxysilane (BITES) and aminoproyltriethoxysilane (APTES) self-assembled monolayers (SAMs)s at the Ru/SiO 2 interface. The covalent bonding and retention of the SAM film on the SiO 2 surface were characterized via angle-resolved X-ray Photoelectron Spectroscopy (AR-XPS) and Time-of-Flight Secondary Ion Mass Spectrometry (Tof-SIMS), respectively. According to the Fuchs–Sondheimer (FS) model and scratch test, the specularity parameter and the adhesion strength of the Ru/BITES/SiO 2 simultaneously improved after thermal annealing compared to the non-functionalized Ru/SiO 2 substrate. The effect of different SAM's terminal groups (amine and benzylimine) on the electron scattering behavior was investigated based on the formation of an interface dipole upon chemisorption of organic molecules on the metal film. Our results indicate that SAM with the benzylimine terminal group formed a larger positive dipole at the SAM layer of the Ru/BITES/SiO 2 interface compared to the Ru/APTES/SiO 2 , leading to an increased in specular electron scattering events and, thus an enhanced electrical performance of the Ru/BITES/SiO 2 .