Abstract
This paper reviews recent developments of p-type doping in CdTe, in which hole concentrations of 5 × 10 19 cm -3 have been obtained with phosphorus ion implantation and pulsed electron beam annealing. The implant and damage profiles, and the atom redistribution after the annealing were calculated to explain the experimental results. Defect models were proposed to further illustrate the doping mechanisms. The creation and the annihilation of the phosphorus interstitials were explained by analyzing the electronic structure of the phosphorus interstitial following a molecular orbital approach and density functional theory. All these results confirmed the importance of the melting effect of pulsed electron beam (PEB) annealing in obtaining the highest doping efficiencies in II-VI compounds.