摘要
GaN smart power chip technology has been realized on the GaN-on-Si platform, featuring monolithically integrated high-voltage power devices, and low-voltage peripheral devices for mixed-signal functional blocks. In particular, this paper presents the imperative analog functional block - the voltage reference generator for smart power applications with wide-temperature-range stability. These circuits are shown to be capable of proper functions from room temperature (RT) up to 250 °C, featuring a negative reference voltage of -2.21 V at RT, and -2.13 V at 250 °C. The optimized voltage reference generator achieved less than 0.5 mV/°C drift. It can be used to create a reference voltage for various biasing and sensing circuits. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.