Abstract
We have investigated the gate oxide integrity of thermal oxides direct grown on high temperature formed Si 0.3 Ge 0.7 . Good oxide integrity is evidenced by the low interface-trap density of 5.9 × 10 10 eV -1 cm -2 , low oxide charge density of -5.6 × 10 10 cm -2 , and the small stress-induced leakage current after -3.3 V stress for 10 000 s. The good gate oxide integrity is due to the high temperature formed and strain-relaxed Si 0.3 Ge 0.7 that has a original smooth surface and stable after subsequent high temperature process.