- Title
- Ge n-Channel Hybrid Memory Based on Ferroelectric Charge Trapping Layer With Low Operating Voltage, Large Memory Window, and Negligible Read Latency
- Creators - without role
- 勇賢 巫
- Publication Details
- IEEE Electron Device Letters, Vol.40(10), pp.1784-1787
- Identifiers
- 9957768187906774
- Academic Unit
- Tsing Hua College, National Tsing Hua University
- Language
- English
- Resource Type
- Journal article
Journal article
Ge n-Channel Hybrid Memory Based on Ferroelectric Charge Trapping Layer With Low Operating Voltage, Large Memory Window, and Negligible Read Latency
IEEE Electron Device Letters, Vol.40(10), pp.1784-1787
01/08/2024
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