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Growth and Structural Characterization of SiGe Nanorings
期刊文章

Growth and Structural Characterization of SiGe Nanorings

J.H. He, C.Y. Chen, C.H. Ho, C.W. Wang, M.J. ChenL.J. Chen
Journal of Physical Chemistry C Journal of Physical Chemistry C, 卷.114(13), 頁碼.5727-5731
2010

摘要

Self-assembled single-crystalline Si1−xGex nanorings (NRs), as small as 10 nm with narrow distributions of height and diameter, have been fabricated without any specific equipment. Compared to other approaches for nanofabricating the ring-like structures, the smallest Si1−xGexNRs with the highest density were obtained by the mediation of Au nanodots. The process promises the availability of Si1−xGex NRs with a wide range of Ge concentration and size, and can serve as a useful platform for the fundamental understanding and future practical applications of NR devices.

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