Abstract
p-n Ga 0.65 In 0.35 P homostructure light-emitting diodes grown on GaAs 0.7 P 0.3 substrates have been fabricated by low-pressure metalorganic vapor-phase epitaxy. The growth and characterization of undoped, Si-, and Zn-doped layers are described in detail. The optimum growth condition to grow the high-quality Ga 0.65 In 0.35 P epitaxial layers is at the growth temperatures of 700-740°C and V/III ratios of 100-200. The strongest photoluminescence peak intensity occurs at 2×10 18 and 7×10 17 cm -3 for electron and hole concentrations, respectively. Diodes fabricated from the p-n homostructure are characterized by current-voltage measurement, electroluminescence, and external quantum efficiency. A forward-bias turn-on voltage of 1.68 V with an ideality factor of 2.5 and a breakdown voltage of 9 V are obtained from the current-voltage measurements. The emission peak wavelength and full width at half-maximum of electroluminescence are around 610 nm and 79 meV at 20 mA. The external quantum efficiency of the uncoated diode is about 0.015%.