摘要
In x Ga1−x As with In composition up to 0.69 has been successfully grown on Si substrates by molecular‐beam epitaxy (MBE) using a modified two‐step and short‐period superlattice process. Double‐crystal x‐ray diffraction revealed a large residual anisotropic strain in samples containing less than 40% In. The short‐period superlattices were effective in reducing dislocations generated near the In x Ga1−x As/Si interface when the In composition was below 0.5.