Abstract
The growth of 1.3-μm-compressive-strain GaInAsP/InP multiple-quantum- well laser diodes (CS-MQW- LD) with a tensile-strain GaInP quantum barrier in the separate-confinement-heterostructure (SCH) regions was discussed. The optimum condition for the GaInP-QB consists of the composition of Ga 0.09 In .91 P-QB, one pair, and a 5-nm-thick GaInP layer. It was found that the GaInP-QB in p-side SCH region had the narrowest photoluminescence (PL) FWHM of 43.1 MeV. It was also observed that as-cleaved LDs with GaInP-QB in the p-side SCH region exhibt the lowest threshold current of 23 mA, which was better than LDs with the GaInP-QB in the n-side SCH region and the conventional LDs without GaInP-QB.