Abstract
High-quality InAs 0.86 Sb 0.05 P 0.09 epitaxial layers lattice-matched to InAs substrates were grown by liquid-phase epitaxy employing a supercooling technique. The epitaxial layers exhibit a shiny and mirror-like surface morphology and a flat interface. The energy gap of InAs 0.86 Sb 0.05 P 0.09 epitaxial layers is 0.4 eV estimated by Fourier-transform infrared reflectance. The InAs 0.86 Sb 0.05 P 0.09 diodes have an ideality factor of 1.1 and a breakdown voltage of 3.5 V. The background electron concentration, measured by capacitance-voltage measurements, is 1.1 × 10 16 cm -3 for the undoped InAsSbP layers. ©1999 Publication Board, Japanese Journal of Applied Physics.