摘要
Nitrogen‐doped GaP and P‐rich GaP1−x N x alloys (x<0.03) exhibiting 77 K photoluminescence(PL) in the yellow–green to red portion of the visible spectrum have been grown on GaP substrates by gas sourcemolecular beam epitaxy. The growth of these compounds was accomplished using gaseous NH3and PH3 and solid Ga as the source materials. In samples with nitrogen concentration [N] < 1020 cm−3, the dominant emission occurred at 569 nm, corresponding to the isoelectronic trap NN1. The PL intensity was greatest for [N]≂ 1020 cm−3. As the nitrogen concentration was increased beyond this value, a monotonic red shift was observed in the emission wavelength, while the intensity generally decreased with increasing [N]. The red shift in the band edge is explained in terms of severe bowing in the compositional dependence of the indirect band gap for the GaP1−x N x system, as predicted by the dielectric theory of electronegativity.