摘要
Growth behavior of (Pr 2/3 Ca 1/3 )MnO 3 , PCMO, thin films deposited by pulsed laser deposition (PLD) process on uncoated or Pt-coatcd silicon substrates was investigated. Perovskite phase of PCMO thin films can be formed directly on Si-substrate only in a very narrow range of deposition parameters. Using PCMO thin films as buffer layer markedly enhances the crystallization kinetics for the subsequently grown Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films, which were prepared by metallo-organic-deposition technique. The perovskite phase of PZT films can be obtained at lower post-annealing temperature (550°TC) and sustain higher heat treatment temperature (700°C) without inducing significant degradation. The presence of PCMO-buffer layer markedly suppresses the leakage currently density for the PZT films, but insignificantly alters their ferroelectric properties.