Abstract
The growth kinetics of amorphous interlayer (a interlayer) in polycrystalline Ti films on single-crystal-silicon has been studied by cross-sectional transmission electron microscopy. The growth was found to follow a linear growth law initially in samples annealed at 350-425°C. The activation energy of the linear growth was measured to be 1.6±0.3 eV. Maximum thicknesses of the a interlayers were measured to be of the order of 10 nm. The formation of an a interlayer was observed in samples annealed at a temperature as high as 600°C. The formation and growth kinetics of a interlayers in Ti/Si and Ni/Zr systems are compared. Essential factors for the formation and growth of an a interlayer are discussed. The results represent the first report on the growth kinetics of an a interlayer in metal thin films on single-crystal silicon.