摘要
The growth kinetics of amorphous interlayers (a interlayers) formed by solid-state diffusion in ultrahigh vacuum deposited polycrystalline Ti thin films on germanium and epitaxial Si 1-x Ge x (x =0.3, 0.4 and 0.7) alloys grown on (001) Si and (111) Ge has been investigated by transmission electron microscopy and Auger electron spectroscopy. The growth of a interlayers in all systems was found to follow a linear growth behavior initially. The activation energies for the linear growth of a interlayers were found to decrease with the Ge content and are 1.0±0.2, 0.95±0.2, 0.85 ±0.2, and 0.7±0.2 eV for Ti/Si 0.7 Ge 0.3 , Ti/Si 0.6 Ge 0.4 , Ti/Si 0.3 Ge 0.7 , and Ti/Ge systems, respectively. The maximum thickness of a interlayer was found to increase with the Ge content with x≤0.4. On the other hand, the formation temperature of crystalline phase was observed to decrease with the Ge content. Essential factors for the formation and growth of a interlayer are discussed. The results are compared with the Ti/Si system. © 2001 American Institute of Physics.