Abstract
Lattice-matched GaAs/Ca 0.45 Sr 0.55 F 2 /GaAs structures are grown by molecular beam epitaxy on GaAs(100) substrates. The surface morphology and crystallinity of each layer are studied as a function of growth temperature. The best fluoride layers are grown with a substrate temperature of about 530°C and show excellent crystallinity (χ min = 7% in ion channeling). The best GaAs layers are obtained around 600°C and show medium bulk crystallinity (χ min = 30%). Electron beam irradiation of the fluoride surface considerably improves the GaAs surface morphology. © 1991.