摘要
A Ga x In1−x P/Ga0.51In0.49P multiple‐quantum‐wire heterostructure was formed in situ through a strain induced lateral layer ordering process occurring spontaneously when (GaP)2/(InP)2 short period superlattices were grown on (100)‐oriented on‐axis GaAs substrates. Cross‐sectional transmission electron microscopy estimated average quantum wire cross sections of ∼50 Å×100 Å leading to a high linear density of ∼100 wires/μm. The existence of the multiple‐quantum wires is also supported by the strong anisotropy for two orthogonal polarizations in polarized photoluminescence measurements.