Abstract
One-dimensional nanowires have attracted much attention because of their unique physical and chemical behaviors. Especially, III-V compound semiconductor nanowires are the best candidate materials as high speed and low power devices due to the highest electron mobility. The scopes of this paper will mainly focus on several points on InAs nanowires (NWs), including growth of InAs NWs from a solid source chemical vapor deposition, controllable growth of InAs NWs in diameter from the metal catalysts, effective Zn doping of InAs via a gas-phase surface diffusion by one-step post-annealing process, and formation of low resistivity metal/InAs alloys with an abrupt interfaces. Furthermore, by using a contact printing technique, InAs NW arrays can be achieved for the applications of large scale devices.