Abstract
The growth and properties of high performance AlGaInP double-heterostructure 616 nm light-emitting diodes grown on misoriented substrates by using a 7.5 μm thick GaP window layer are presented. The GaP layer is grown on top of the heterostructure by low-pressure metalorganic vapor phase epitaxy at a growth rate of 10 μm/h. A significant improvement in the surface morphology and device performance can be obtained by utilizing both misoriented substrates as high as 15° from (100) toward the [011] direction and the growth of GaP at a higher temperature of 800°C. An external quantum efficiency of 3.5% is obtained in this way. © 1994.